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HC165A 30NQ15 7805T 60101 21100 IRFZ4 20S100C GP120
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  absolute maximum ratings symbol parameter value units v ces collector-emitter voltage ( v be = 0 ) 700 v v ceo collector-emitter voltage ( i b = 0 ) 400 v v ebo emitter-base voltage ( i c = 0 ) 9.0 v i c collector current 12.0 a i cp collector pulse current 24.0 a i b base current 6.0 a i bm base peak current ( t p 5 ms ) 12.0 a p c total dissipation at t c = 25 c 130 w t stg storage temperature - 65 ~ 150 c t j max. operating junction temperature 150 c thermal characteristics symbol parameter value units r jc thermal resistance, junction-to-case 1.67 c/w r ja thermal resistance, junction-to-ambient 62.5 c/w SBW13009-S jul, 2006. rev. 0 1/4 c c features - very high switching speed - minimum lot-to-lot hfe variation - wide reverse bias s.o.a general description this device is designed for high voltage, high speed switching char- acteristic required such as light ing system, switch ing mode power supply. high voltage fast-switching npn power transistor 2.collector 3.emitter 1.base symbol to-3p semiwell semiconductor 1 2 3 copyright@semiwell semiconductor co., ltd., all rights reserved
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter condition min typ max units i cev collector cut-off current ( v be = - 1.5v ) v ce = 700v v ce = 700v t c = 100 c - - 1.0 5.0 ma v ceo(sus) collector-emitter sustaining voltage ( i b = 0 ) i c = 10 ma 400 -- v v ce(sat) collector-emitter saturation voltage i c = 5.0a i b = 1.0a i c = 8.0a i b = 1.6a i c = 12.0a i b = 3.0a - - 0.5 0.6 1.0 v v be(sat) base-emitter saturation voltage i c = 5.0a i b = 1.0a i c = 8.0a i b = 1.6a -- 1.2 1.6 v h fe * dc current gain i c = 5.0a v ce = 5v i c = 8.0a v ce = 5v 20 5 - 40 30 t s t f storage time fall time i c = 8.0a v cc = 125v i b1 = 1.6a i b2 = -1.6a t p = 25 ? - 3.0 0.7 ? SBW13009-S 2/4
SBW13009-S 3/4 fig 1. saturation voltage fig 2. dc current gain fig 3. swiching time fig 4. power derating fig 5. safe operation area fig 6. collect output capacitance
SBW13009-S to-3p dimension 4/4 corresponding symbol measurement a(mm) 15.600.20 a1(mm) 13.600.20 a2(mm)dia. 9.600.20 b(mm) 19.900.20 b1(mm) 13.900.20 b2(mm) 12.760.20 b3(mm) 3.800.20 c(mm) 20.000.30 c1(mm) 3.500.20 c2(mm) 16.500.30 d(mm) 5.45(typ) d1 2.0 0.20 d2 3.00.20 d3 1.000.20 e(mm) 4.800.20 +0.15 e1(mm) 1.50 -0.05 e2(mm) 1.400.20 f(mm) 18.700.20 +0.15 g(mm) 0. 60 -0.05 (mm) 3.200.10


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